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NP50P04SLG Datasheet(PDF) 6 Page - Renesas Technology Corp |
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NP50P04SLG Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 8 page NP50P04SLG Chapter Title R07DS0241EJ0100 Rev.1.00 Page 6 of 6 Feb 09, 2011 Package Drawings (Unit: mm) TO-252 (MP-3ZK) 6.5 ±0.2 2.3 ±0.1 0.5 ±0.1 0.76 ±0.12 0 to 0.25 0.5 ±0.1 1.0 No Plating No Plating 5.1 TYP. 4.3 MIN. 1 4 23 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Equivalent Circuit Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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