Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

NX6240GP Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # NX6240GP
Description  LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NX6240GP Datasheet(HTML) 5 Page - Renesas Technology Corp

  NX6240GP Datasheet HTML 1Page - Renesas Technology Corp NX6240GP Datasheet HTML 2Page - Renesas Technology Corp NX6240GP Datasheet HTML 3Page - Renesas Technology Corp NX6240GP Datasheet HTML 4Page - Renesas Technology Corp NX6240GP Datasheet HTML 5Page - Renesas Technology Corp NX6240GP Datasheet HTML 6Page - Renesas Technology Corp NX6240GP Datasheet HTML 7Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 5 / 7 page
background image
NX6240GP
Chapter Title
R08DS0057EJ0100 Rev.1.00
Page 5 of 5
Mar 01, 2012
SAFETY INFORMATION ON THIS PRODUCT
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
SEMICONDUCTOR LASER
Warning
Laser Beam
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.


Similar Part No. - NX6240GP

ManufacturerPart #DatasheetDescription
logo
California Eastern Labs
NX6240GP CEL-NX6240GP Datasheet
937Kb / 6P
   1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
NX6240GP-AZ CEL-NX6240GP-AZ Datasheet
937Kb / 6P
   1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
logo
Renesas Technology Corp
NX6240GP RENESAS-NX6240GP_15 Datasheet
200Kb / 7P
   LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
More results

Similar Description - NX6240GP

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
NX6240GP RENESAS-NX6240GP_15 Datasheet
200Kb / 7P
   LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
logo
California Eastern Labs
NX6240GP CEL-NX6240GP Datasheet
937Kb / 6P
   1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
logo
Renesas Technology Corp
NX8346TS RENESAS-NX8346TS Datasheet
172Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8369TB RENESAS-NX8369TB Datasheet
213Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
California Eastern Labs
NX8369TB CEL-NX8369TB Datasheet
214Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
Renesas Technology Corp
NX8349TB RENESAS-NX8349TB_15 Datasheet
204Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349YK RENESAS-NX8349YK_15 Datasheet
253Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TB RENESAS-NX8349TB Datasheet
211Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
California Eastern Labs
NX8349TS CEL-NX8349TS_16 Datasheet
705Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
Renesas Technology Corp
NX8346TS RENESAS-NX8346TS_15 Datasheet
164Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
More results


Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com