MCM6208C

2

MOTOROLA FAST SRAM

E

W

Mode

VCC Current

Output

Cycle

H

L

L

X

H

L

Not Selected

Read

Write

ISB1, ISB2

ICCA

ICCA

High–Z

Dout

High–Z

—

Read Cycle

Write Cycle

Rating

Symbol

Value

Unit

Power Supply Voltage

VCC

– 0.5 to + 7.0

V

Voltage Relative to VSS For Any Pin

Except VCC

Vin, Vout

– 0.5 to VCC + 0.5

V

Output Current

Iout

± 20

mA

Power Dissipation

PD

1.0

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature — Plastic

Tstg

– 55 to + 125

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VCC

4.5

5.0

5.5

V

Input High Voltage

VIH

2.2

—

V

Input Low Voltage

VIL

– 0.5

*

—

0.8

V

* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns)

** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20 ns)

DC CHARACTERISTICS

Parameter

Symbol

Min

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC)

Ilkg(I)

—

± 1

µA

Output Leakage Current (E1 = VIH, Vout = 0 to VCC)

Ilkg(O)

—

± 1

µA

Standby Current (E

≥ VCC – 0.2 V*, Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V,

VCC = Max, f = 0 MHz)

ISB2

—

20

mA

Output Low Voltage (IOL = 8.0 mA)

VOL

—

0.4

V

Output High Voltage (IOH = – 4.0 mA)

VOH

2.4

—

V

POWER SUPPLY CURRENTS

Parameter

Symbol

– 12

– 15

– 20

– 25

– 35

Unit

AC Supply Current (Iout = 0 mA, VCC = Max, f = fmax)

ICCA

165

155

145

135

135

mA

Standby Current (E = VIH, VCC = Max, f = fmax)

ISB1

55

50

45

40

40

mA

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to this high–impedance

circuit.

This CMOS memory circuit has been

designed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear

feet per minute is maintained.