PS9308L-E3 datasheet(7/18 Pages) RENESAS

Part #	PS9308L-E3

Description	2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER

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Manufacturer	RENESAS [Renesas Technology Corp]

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7 / 18 page

PS9308L,PS9308L2

Chapter Title

R08DS0048EJ0100 Rev.1.00

Page 7 of 16

Aug 31, 2011

SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,

VEE = GND, unless otherwise specified)

Parameter

Symbol

Conditions

MIN.

TYP.

*1

MAX.

Unit

Propagation Delay Time (L

→ H)

tPLH

Rg = 10

Ω, Cg = 10 nF,

0.08

0.25

μs

Propagation Delay Time (H

→ L)

tPHL

f = 10 kHz,

0.10

0.25

μs

Pulse Width Distortion (PWD)

|tPHL

−tPLH| Duty Cycle = 50%

*2,

0.02

0.1

μs

Propagation Delay Time

(Difference Between Any Two

Products)

tPHL

−tPLH IF = 10 mA

－

0.1

μs

Rise Time

tr

50

ns

Fall Time

tf

50

ns

Common Mode Transient

Immunity at High Level Output

|CMH|

TA = 25

°C, IF = 10 mA,

VCC = 30 V, VCM = 1.5 kV,

VO (MIN.) = 26 V

25

kV/

μs

Common Mode Transient

Immunity at Low Level Output

|CML|

TA = 25

°C, IF = 0 mA,

VCC = 30 V, VCM = 1.5 kV,

VO (MAX.) = 1 V

25

kV/

μs

Notes: *1. Typical values at TA = 25

°C.

*2. This load condition is equivalent to the IGBT load at 1 200 V/25 A.

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PS9308L-E3 Datasheet(PDF) 7 Page - Renesas Technology Corp

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