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PS9308L-V Datasheet(PDF) 1 Page - Renesas Technology Corp |
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PS9308L-V Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 18 page R08DS0048EJ0100 Rev.1.00 Page 1 of 16 Aug 31, 2011 Preliminary Data Sheet PS9308L,PS9308L2 2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER DESCRIPTION The PS9308L and PS9308L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9308L and PS9308L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9308L2 has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP. The PS9308L and PS9308L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs. The PS9308L is lead bending type (Gull-wing) for surface mounting. The PS9308L2 is lead bending type for long creepage distance (Gull-wing) for surface mount. FEATURES • Long creepage distance (8 mm MIN.: PS9308L2) • Half size of 8-pin DIP • Peak output current (2.0 A MAX., 1.0 A MIN.) • High speed switching (tPLH, tPHL = 0.25 μs MAX.) • UVLO (Under Voltage Lock Out) protection with hysteresis • High common mode transient immunity (CMH, CML = ±25 kV/ μs MIN.) • Embossed tape product : PS9308L-E3, PS9308L2-E3 : 2 000 pcs/reel • Pb-Free product • Safety standards • UL approved: No. E72422 • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) • SEMKO approved: No. 1115598 • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option) APPLICATIONS • IGBT, Power MOS FET Gate Driver • Industrial inverter • IH (Induction Heating) R08DS0048EJ0100 Rev.1.00 Aug 31, 2011 1. Anode 2. NC 3. Cathode 4. VEE 5. VO 6. VCC PIN CONNECTION (Top View) 64 13 2 5 |
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