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RJH1CD6DPQ-E0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJH1CD6DPQ-E0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 4 page RJH1CD6DPQ-E0 Preliminary R07DS0518EJ0400 Rev.4.00 Page 2 of 3 Jan 19, 2012 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current / Diode reverse current ICES/IR — — 5 A VCE = 1200 V, VGE = 0 Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 4 — 8 V VCE = 10 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) — 2.0 — V IC = 25 A, VGE = 15 V Note3 Input capacitance Cies — 1600 — pF Output capacitance Coes — 60 — pF Reveres transfer capacitance Cres — 35 — pF VCE = 25 V VGE = 0 f = 1 MHz td(on) — 45 — ns tr — 15 — ns td(off) — 100 — ns Switching time tf — 100 — ns VCC = 600 V, VGE = 15 V IC = 25 A Rg = 5 Inductive load Short circuit withstand time tsc — 5 — s VCC 720 V, VGE = 15 V Tc 125°C FRD forward voltage VF — 1.7 — V IF = 25 A Note3 FRD reverse recovery time trr — 200 — ns IF = 25 A diF/dt = 100 A/s Notes: 3. Pulse test. |
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