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RJH60F5BDPQ-A0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJH60F5BDPQ-A0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 9 page  RJH60F5BDPQ-A0 Preliminary R07DS0631EJ0100 Rev.1.00 Page 2 of 8 Feb 17, 2012 Electrical Characteristics (Tj = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current ICES 100 A VCE = 600V, VGE = 0 Gate to emitter leak current IGES ±1 A VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 4 8 V VCE = 10 V, IC = 1 mA VCE(sat) 1.37 1.8 V IC = 40 A, VGE = 15 V Note3 Collector to emitter saturation voltage VCE(sat) 1.7 V IC = 80 A, VGE = 15 V Note3 Input capacitance Cies 2780 pF Output capacitance Coes 122 pF Reverse transfer capacitance Cres 43 pF VCE = 25 V VGE = 0 V f = 1 MHz td(on) 53 ns tr 34 ns td(off) 95 ns Switching time tf 68 ns IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note3, Inductive load C-E diode forward voltage VECF 2.5 3.0 V IF = 30 A Note3 C-E diode reverse recovery time trr 25 ns IF = 30 A diF/dt = 100 A/s Notes: 3. Pulse test |
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