RJK0214DPA datasheet(3/11 Pages) RENESAS

Part #	RJK0214DPA

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

3 / 11 page

RJK0214DPA

Preliminary

R07DS0206EJ0110 Rev.1.10

Page 3 of 10

Sep 02, 2011

• MOS2

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

25

—

V

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.5

A

VGS = ±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

mA

VDS = 25 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

V

VDS = 10 V, I D =1 mA

RDS(on)

—

1.6

2.0

m



ID =22.5 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

2.1

2.8

m



ID = 22.5 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

100

—

S

ID = 22.5 A, VDS = 5 V

Note4

Input capacitance

Ciss

—

5200

7280

pF

Output capacitance

Coss

—

850

—

pF

Reverse transfer capacitance

Crss

—

470

—

pF

VDS = 10 V

VGS = 0

f = 1MHz

Gate Resistance

Rg

—

1.05

2.2



Total gate charge

Qg

—

35

—

nC

Gate to source charge

Qgs

—

16

—

nC

Gate to drain charge

Qgd

—

8.7

—

nC

VDD = 10 V

VGS = 4.5 V

ID = 45 A

Turn-on delay time

td(on)

—

18

—

ns

Rise time

tr

—

8

—

ns

Turn-off delay time

td(off)

—

71

—

ns

Fall time

tf

—

12

—

ns

VGS = 10 V, ID = 22.5 A

VDD  10 V

RL = 0.44 

Rg = 4.7 

Schottky Barrier diode forward voltage

VF

—

0.39

—

V

IF = 2 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

33

—

ns

IF = 45 A, VGS = 0

diF/ dt = 100 A/s

Notes: 4. Pulse

Similar Part No. - RJK0214DPA

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	RJK0210DPA	71Kb / 4P	Silicon N Channel Power MOS FET Power Switching
	RJK0210DPA	133Kb / 7P	Silicon N Channel Power MOS FET Power Switching
	RJK0210DPA-00-J53	71Kb / 4P	Silicon N Channel Power MOS FET Power Switching
	RJK0210DPA-00-J5A	133Kb / 7P	Silicon N Channel Power MOS FET Power Switching
	RJK0210DPA	133Kb / 7P	Silicon N Channel Power MOS FET Power Switching

More results

Similar Description - RJK0214DPA

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	RJK0215DPA	271Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0389DPA	113Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2126RP	263Kb / 17P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0383DPA	114Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2285WP	130Kb / 10P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0389DPA	358Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2210R	116Kb / 12P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0230DPA	221Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2285WP	115Kb / 10P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0223DNS	81Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

More results

RJK0214DPA Datasheet(PDF) 3 Page - Renesas Technology Corp

RJK0214DPA Datasheet(HTML) 3 Page - Renesas Technology Corp

Similar Part No. - RJK0214DPA

Similar Description - RJK0214DPA

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL