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RJK6012DPP-E0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK6012DPP-E0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0611EJ0100 Rev.1.00 Page 1 of 6 Mar 16, 2012 Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID Note4 10 A Drain peak current ID (pulse) Note1 20 A Body-drain diode reverse drain current IDR 10 A Body-drain diode reverse drain peak current IDR (pulse) Note1 20 A Avalanche current IAP Note3 3 A Avalanche energy EAR Note3 0.49 mJ Channel dissipation Pch Note2 30 W Channel to case thermal impedance ch-c 4.17 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C 4. Limited by maximum safe operation area R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 |
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