RJM0603JSC datasheet(8/12 Pages) RENESAS

Part #	RJM0603JSC

Description	Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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8 / 12 page

RJM0603JSC

Preliminary

R07DS0339EJ0501 Rev.5.01

Page 8 of 11

Jul 22, 2011

 MOS4, MOS5, MOS6 (P Channel)

Gate Charge Qg (nc)

Dynamic Input Characteristics

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Avalanche Test Circuit

Avalanche Waveform

0

–10

–20

–30

10000

1000

100

10

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

0

–4

–8

–12

–16

–20

0

–10

–20

–30

–40

–50

20

40

60

80

100

0

–0.5

–1.0

–1.5

–2.0

–20

–5

–15

–10

D. U. T

Rg

IAP

Monitor

VDS

Monitor

VDD

50

Ω

Vin

–15 V

0

ID

VDS

IAP

V(BR)DSS

L

VDD

EAR =

L

• I

AP

2

•

2

1

VDSS

VDSS – VDD

VGS

ID = –20 A

VDS

VDD = –25 V

–10 V

–5 V

VDD = –25 V

–10 V

–5 V

VGS = 0 V, 5 V

Pulse Test

–10 V

50

40

30

20

10

25

50

75

100 125

150

175

0

Channel Temperature Tch (

°C)

Avalanche Energy vs.

Channel Temperature Derating

IAP = –20 A

VDD = –25 V

duty < 0.1 %

Rg

≥ 50 Ω

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

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