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RJM0603JSC Datasheet(PDF) 8 Page - Renesas Technology Corp |
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RJM0603JSC Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 12 page RJM0603JSC Preliminary R07DS0339EJ0501 Rev.5.01 Page 8 of 11 Jul 22, 2011 MOS4, MOS5, MOS6 (P Channel) Gate Charge Qg (nc) Dynamic Input Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Avalanche Test Circuit Avalanche Waveform 0 –10 –20 –30 10000 1000 100 10 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 0 –4 –8 –12 –16 –20 0 0 –10 –20 –30 –40 –50 20 40 60 80 100 0 –0.5 –1.0 –1.5 –2.0 –20 –5 –15 –10 D. U. T Rg IAP Monitor VDS Monitor VDD 50 Ω Vin –15 V 0 ID VDS IAP V(BR)DSS L VDD EAR = L • I AP 2 • 2 1 VDSS VDSS – VDD VGS ID = –20 A VDS VDD = –25 V –10 V –5 V VDD = –25 V –10 V –5 V VGS = 0 V, 5 V Pulse Test –10 V 50 40 30 20 10 25 50 75 100 125 150 175 0 Channel Temperature Tch ( °C) Avalanche Energy vs. Channel Temperature Derating IAP = –20 A VDD = –25 V duty < 0.1 % Rg ≥ 50 Ω VGS = 0 f = 1 MHz Ciss Coss Crss |
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