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RJP60F4DPM Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJP60F4DPM
Description  600 V - 30 A - IGBT High Speed Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP60F4DPM Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJP60F4DPM
Preliminary
R07DS0586EJ0100 Rev.1.00
Page 4 of 6
Nov 25, 2011
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
800
600
400
200
0
0
16
12
8
4
0
20
40
60
80
100
IC = 30 A
VGE
VCE
VCE = 600 V
300 V
VCE = 600 V
300 V
1
10
100
1000
10000
0
50150
100
200
250
300
Typical Capacitance vs.
Colloctor to Emitter Voltage
Colloctor to Emitter Voltage VCE (V)
Cies
Coes
Cres
VGE = 0 V
f = 1 MHz
Ta = 25°C
0
50
25
150
75
125
100
0
50
25
150
75
125
100
800
400
1600
1200
0
120
80
40
240
200
160
0
Switching Characteristics (Typical) (3)
100
1000
10
td(off)
td(on)
tf
tr
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
Switching Characteristics (Typical) (4)
Eoff
Eon
1
10
200
100
10
1000
100
100000
10000
1
10
100
Collector Current IC (A)
(Inductive load)
Eoff
Eon
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
Collector Current IC (A)
(Inductive load)
VCC = 400 V, VGE = 15 V
Rg = 5
Ω, Tj = 150°C
tr includes the diode recovery
VCC = 400 V, VGE = 15 V
Rg = 5
Ω, Tj = 150°C
Eon includes the diode recovery
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
tr includes the diode recovery
td(off)
td(on)
tf
tr


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