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RJP63K2DPK-M0 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJP63K2DPK-M0
Description  Silicon N Channel IGBT High speed power switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP63K2DPK-M0 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJP63K2DPK-M0
Preliminary
R07DS0469EJ0200 Rev.2.00
Page 3 of 6
Jun 15, 2011
Main Characteristics
Collector Current IC (A)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
0.1
1
10
1
10
100
25°C
−25°C
Tc = 75
°C
VGE = 15 V
Pulse Test
Typical Transfer Characteristics
0
10
20
30
40
50
02468
10
VCE = 10 V
Pulse Test
Gate to Emitter Voltage VGE (V)
25°C
−25°C
Tc = 75
°C
0
0
4
8
12
20
16
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
120 A
80 A
IC = 35 A
Gate to Emitter Voltage VGE (V)
0
4
2
6
8
10
Ta = 25°C
Pulse Test
Typical Output Characteristics
100
80
60
40
20
2468
10
Ta = 25°C
Pulse Test
10 V
15 V
0
0
6 V
6.5 V
7 V
7.5 V
8.5 V
8 V
9 V
V
GE = 5.5 V
Collector to Emitter Voltage VCE (V)
Maximum Safe Operation Area
Collector to Emitter Voltage VCE (V)
1000
100
10
0.1
1
10
100
1
0.01
0.1
1000
10
μs
Ta = 25°C
1 shot pulse
PW
=
100
μs


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