RJP4009ANS datasheet(2/5 Pages) RENESAS

Part #	RJP4009ANS

Description	Nch IGBT for Strobe Flash

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJP4009ANS

Preliminary

R07DS0370EJ0200 Rev.2.00

Page 2 of 4

Apr 27, 2011

Electrical Characteristics

(Tj = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-emitter leakage current

ICES

—

1

μA

VCE = 400 V, VGE = 0 V

Gate-emitter leakage current

IGES

—

±10

μA

VGE = ±6 V, VCS = 0 V

Gate-emitter threshold voltage

VGE(th)

0.4

0.6

1.2

V

VCE = 10 V, IC = 1 mA

Collector-emitter saturation voltage

VCE(sat)

—

4.0

9.0

V

IC = 150 A, VGE = 2.5 V

Input capacitance

Cies

—

5500

—

pF

VCE = 25 V, VGE = 0 V,

f = 1 MHz

Performance Curves

Maximum Pulse Collector Current

(Conductive Capability in Strobe Flash Circuit)

Gate - Emitter Voltage VGE (V)

0

50

100

200

150

012

3

4

7

6

5

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