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RJP4009ANS Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJP4009ANS Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page RJP4009ANS Preliminary R07DS0370EJ0200 Rev.2.00 Page 2 of 4 Apr 27, 2011 Electrical Characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-emitter leakage current ICES — — 1 μA VCE = 400 V, VGE = 0 V Gate-emitter leakage current IGES — — ±10 μA VGE = ±6 V, VCS = 0 V Gate-emitter threshold voltage VGE(th) 0.4 0.6 1.2 V VCE = 10 V, IC = 1 mA Collector-emitter saturation voltage VCE(sat) — 4.0 9.0 V IC = 150 A, VGE = 2.5 V Input capacitance Cies — 5500 — pF VCE = 25 V, VGE = 0 V, f = 1 MHz Performance Curves Maximum Pulse Collector Current (Conductive Capability in Strobe Flash Circuit) Gate - Emitter Voltage VGE (V) 0 50 100 200 150 012 3 4 7 6 5 |
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