R07DS0418EJ0300 Rev.3.00

Page 1 of 14

Sep 09, 2011

RQA0004PXDQS

Silicon N-Channel MOS FET

Features

 High Output Power, High Efficiency

Pout = +29.7 dBm, PAE = 68% (f = 520 MHz)

 Compact package capable of surface mounting

Outline

1. Gate

2. Source

3. Drain

4. Source

1

3

2, 4

1

2

3

4

RENESAS Package code: PLZZ0004CA-A

(Package Name : UPAK)

Note:

Marking is “PX”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

16

V

Gate to source voltage

±5

V

Drain current

0.3

A

Channel dissipation

Pch

note

3

W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Note: Value at Tc = 25

C

This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.

R07DS0418EJ0300

Rev.3.00

Sep 09, 2011