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FZL4146 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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FZL4146 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 14 page FZL 4146 Semiconductor Group 7 Notes: 5) Loading may lead to degradation and thus to a shift of the switching threshold at W. Unfrequent loading leads to a deviation of approx. 20 mV. 6) Related to GND; the GND pins are connected with the chip carrier via the leadframe. 7) If it can be prooved with samples. 8) During normal operation, the failure rate is ≤ 100 fit acc. to SN 29500 at a junction temperature of 75 °C. Current in SQ Current in W Current in W I SQ I W I W – 3 – 5 – 10 8 5 10 mA mA mA Output low 1 ms, 50 ms interval 5) 10 µs, 500 µs interval 5) Junction temperature Storage temperature Therm. resistance, system-ambient Therm. resistance, system-packag. T j T stg R th SA R th SP – 40 – 50 150 150 95 25 °C °C K/W K/W 6) ESD strength acc. to MIL - hrs. 883 Meth. 3015 (100 pF/1.5 k Ω, 5 discharges/polarity) V ESD – 2 2 kV Burst strength of the inputs/ outputs Q and W connected to the power transistors (in acc. with IEC publ. 801-4) V Burst 300 V 7) Junction temperature in normal operation during 15 years with 100 % ED T j15 125 °C 8) Absolute Maximum Ratings (cont’d) Parameter Symbol Limit Values Unit Remarks min. max. |
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