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HYB3117800BSJ-60 Datasheet(PDF) 8 Page - Siemens Semiconductor Group

Part # HYB3117800BSJ-60
Description  2M x 8-Bit Dynamic RAM
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB3117800BSJ-60 Datasheet(HTML) 8 Page - Siemens Semiconductor Group

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Semiconductor Group
8
HYB 3117800BSJ-50/-60/-70
2M x 8-DRAM
Output buffer turn-off delay from
OE
tOEZ
013
0
15
020
ns
12
Data to OE low delay
tDZO
0–0
–0–
ns
13
CAS high to data delay
tCDD
13
15
20
ns
14
OE high to data delay
tODD
13
15
20
ns
14
Write Cycle
Write command hold time
tWCH
8–10
10
ns
Write command pulse width
tWP
8–10
10
ns
Write command setup time
tWCS
0–0
–0–
ns
15
Write command to RAS lead time tRWL
13
15
20
ns
Write command to CAS lead time tCWL
13
15
20
ns
Data setup time
tDS
0–0
–0–
ns
16
Data hold time
tDH
10
10
15
ns
16
Data to CAS low delay
tDZC
0–0
–0–
ns
13
Read-Modify-Write Cycle
Read-write cycle time
tRWC
126
150
180
ns
RAS to WE delay time
tRWD
68
80
95
ns
15
CAS to WE delay time
tCWD
31
35
45
ns
15
Column address to WE delay time tAWD
43
50
60
ns
15
OE command hold time
tOEH
13
15
20
ns
Fast Page Mode Cycle
Fast page mode cycle time
tPC
35
40
45
ns
CAS precharge time
tCP
10
10
10
ns
Access time from CAS precharge
tCPA
–30
35
–40
ns
7
RAS pulse width
tRAS
50
200k
60
200k
70
200k
ns
CAS precharge to RAS Delay
tRHPC
30
35
40
ns
AC Characteristics (cont’d) 5)6)
16F
T
A = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.


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