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2SK4075B-ZK-E1-AY Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SK4075B-ZK-E1-AY Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK4075B SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D20258EJ1V0DS00 (1st edition) Date Published March 2010 NS Printed in Japan DESCRIPTION The 2SK4075B is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075B-ZK-E1-AY 2SK4075B-ZK-E2-AY Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g FEATURES • Low on-state resistance RDS(on)1 = 7.9 m Ω MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 10 m Ω MAX. (VGS = 4.5 V, ID = 13 A) • Low Ciss: Ciss = 2230 pF TYP. • Logic level drive type ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±50 A Drain Current (pulse) Note1 ID(pulse) ±120 A Total Power Dissipation (TC = 25°C) PT1 36 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 20.8 A Single Avalanche Energy Note2 EAS 43 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 3.47 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W (TO-252) 2010 |
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