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HYB314171BJ-70 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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HYB314171BJ-70 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
9 / 24 page HYB 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Semiconductor Group 9 Fast Page Mode Read Modify Write Cycle Fast page mode read/write cycle time t PRWC 80 – 90 – 100 – ns CAS precharge to WE delay time t CPWD 55 – 60 – 65 – ns CAS before RAS refresh Cycle CAS setup time t CSR 5–5–5–ns CAS hold tim t CHR 10 – 10 – 10 – ns RAS to CAS precharge time t RPC 0–0–0–ns Write to RAS precharge time t WRP 10 – 10 – 10 – ns Write to RAS hold time t WRH 10 – 10 – 10 – ns CAS-before RAS counter test cycle CAS precharge time t CPT 25 – 30 – 40 – ns Self Refresh Cycle (L-Version only) RAS pulse width t RASS 100 – 100 – 100 – µs RAS precharge time t RPS 95 – 110 – 130 – ns CAS hold time Self Refresh t CHS 35 – 40 – 50 – ns Parameter Symbol Limit Values Unit Note -50 - 60 - 70 min. max. min. max. min. max. |
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