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NE3517S03-T1D Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # NE3517S03-T1D
Description  K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NE3517S03-T1D Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PG10787EJ01V0DS
3
NE3517S03
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Ambient Temperature TA (
°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
200
150
100
50
50
0
100
150
200
250
100
80
60
40
20
0
1.0
2.0
Drain to Source Voltage VDS (V)
DRAIN CURRENT
vs. DRAIN TO SOURCE VOLTAGE
80
60
40
20
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
20
15
10
5
0
–5
50
45
40
35
30
25
20
15
10
5
0
20
19
18
17
16
15
14
13
12
11
10
–2.0
–1.0
0
–20
–15
–10
–5
0
5
10
Gate to Source Voltage VGS (V)
DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
Input Power Pin (dBm)
OUTPUT POWER, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
Frequency f (GHz)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
12
14
16
10
18
24
20
22
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
VDS = 3 V, ID = 15 mA set
f = 20 GHz
VGS = 0 V
–0.2 V
ID
NFmin
Ga
IG
–0.4 V
–0.6 V
VDS = 2 V
VDS = 2 V
ID = 10 mA
Pout
Remark The graphs indicate nominal characteristics.


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