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HYB3164165AT-60 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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HYB3164165AT-60 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 29 page Semiconductor Group 8 HYB3164(5/6)165AT(L)-40/-50/-60 4M x 16 EDO-DRAM Absolute Maximum Ratings Operating temperature range..............................................................................................0 to 70 °C Storage temperature range.........................................................................................– 55 to 150 °C Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage....................................................................................................-0.5V to 4.6 V Power dissipation......................................................................................................................1.3 W Data out current (short circuit)..................................................................................................50 mA Note Stresses above those listed under „Absolute Maximum Ratings“ may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability. DC Characteristics T A = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V Parameter Symbol Limit Values Unit Note min. max. Input high voltage V IH 2.0 Vcc+0.3 V 1) Input low voltage V IL – 0.3 0.8 V 1) Output high voltage (LVTTL) Output „H“ level voltage (Iout = -2mA) V OH 2.4 – V Output low voltage (LVTTL) Output „L“level voltage (Iout = +2mA) V OL – 0.4 V Output high voltage (LVCMOS) Output „H“ level voltage (Iout = -100uA) V OH Vcc-0.2 - V Ouput low voltage (LVCMOS) Output „L“ level voltage (Iout = +100uA) V OL - 0.2 V Input leakage current,any input (0 V < Vin < Vcc , all other pins = 0 V I I(L) – 2 2 µA Output leakage current (DO is disabled, 0 V < Vout < Vcc ) I O(L) – 2 2 µA |
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