Semiconductor Group

2

HYB3164(5/6)165BT(L)-40/-50/-60

4M x 16 EDO-DRAM

This device is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in an

advanced first generation 64Mbit 0,35

µm CMOS silicon gate process technology. The circuit and

process design allow this device to achieve high performance and low power dissipation. The

HYB3164(5)165BT operates with a single 3.3 +/-0.3V power supply and interfaces with either

LVTTL or LVCMOS levels. Multiplexed address inputs permit the

HYB3164(5/6)165BT to be

packaged in 400mil wide TSOPII-50 package. These packages provide high system bit densities

and are compatible with commonly used automatic testing and insertion equipment. The

HYB3164(5/6)165BTL parts have a very low power „sleep mode“supported by Self Refresh.

Ordering Information

Type

Ordering

Code

Package

Descriptions

8k-refresh versions:

HYB 3164165BT-40

P-TSOPII-50

400 mil

EDO-DRAM (access time 40 ns)

HYB 3164165BT-50

P-TSOPII-50

400 mil

EDO-DRAM (access time 50 ns)

HYB 3164165BT-60

P-TSOPII-50

400 mil

EDO-DRAM (access time 60 ns)

HYB 3164165BTL-50

P-TSOPII-50

400 mil

EDO-DRAM (access time 50 ns)

HYB 3164165BTL-60

P-TSOPII-50

400 mil

EDO-DRAM (access time 60 ns)

4k-refresh versions:

HYB 3165165BT-40

P-TSOPII-50

400 mil

EDO-DRAM (access time 40 ns)

HYB 3165165BT-50

P-TSOPII-50

400 mil

EDO-DRAM (access time 50 ns)

HYB 3165165BT-60

P-TSOPII-50

400 mil

EDO-DRAM (access time 60 ns)

HYB 3165165BTL-50

P-TSOPII-50

400 mil

EDO-DRAM (access time 50 ns)

HYB 3165165BTL-60

P-TSOPII-50

400 mil

EDO-DRAM (access time 60 ns)

2k-refresh versions:

HYB 3166165BT-40

P-TSOPII-50

400 mil

EDO-DRAM (access time 40 ns)

HYB 3166165BT-50

P-TSOPII-50

400 mil

EDO-DRAM (access time 50 ns)

HYB 3166165BT-60

P-TSOPII-50

400 mil

EDO-DRAM (access time 60 ns)

HYB 3166165BTL-50

P-TSOPII-50

400 mil

EDO-DRAM (access time 50 ns)

HYB 3166165BTL-60

P-TSOPII-50

400 mil

EDO-DRAM (access time 60 ns)