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RJK2006DPJ Datasheet(PDF) 6 Page - Renesas Technology Corp |
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RJK2006DPJ Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page RJK2006DPJ, RJK2006DPE, RJK2006DPF REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 4 of 7 400 0 16 300 12 200 8 100 4 20 40 60 80 100 0 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics (Typical) 0 0.4 0.8 1.2 1.6 2.0 50 20 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) Case Temperature Tc (°C) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 10 0 30 40 0 5 -25 0 25 50 75 100 125 150 2 1 3 4 VDS VGS VDD = 160 V 100 V 50 V VDD = 160 V 100 V 50 V VDS = 10 V 0.1 mA ID = 40 A Ta = 25 °C VGS = 0 V Ta = 25 °C Pulse Test 0 50 100 10000 100 1000 10 VGS = 0 f = 1 MHz Ta = 25°C Ciss Coss Crss ID = 10 mA 1 mA |
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Similar Description - RJK2006DPJ_10 |
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