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RJK4518DPK Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK4518DPK Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK4518DPK Preliminary R07DS0132EJ0200 Rev.2.00 Page 4 of 6 Sep 08, 2010 800 0 16 600 12 400 8 200 0 4 40 80 120 160200 0 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics (Typical) 00.4 0.8 1.21.6 2.0 100 40 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) Case Temperature Tc ( °C) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 20 0 60 80 0 6 5 -25 02550 75 100 125 150 2 1 3 4 VDS VDD = 360 V 200 V 100 V VDD = 360 V 200 V 100 V VDS = 10 V ID = 10 mA 1 mA 0.1 mA ID = 39 A Ta = 25 °C VGS = 0 Ta = 25 °C Pulse Test 0 100 200 10000 100 1000 10 VGS = 0 f = 1 MHz Ta = 25 °C Ciss Coss Crss VGS |
Similar Part No. - RJK4518DPK_10 |
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Similar Description - RJK4518DPK_10 |
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