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NE5550234-T1 Datasheet(PDF) 7 Page - Renesas Technology Corp |
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NE5550234-T1 Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 16 page  NE5550234 R09DS0039EJ0100 Rev.1.00 Page 7 of 14 Apr 25, 2012 TYPICAL CHARACTERISTICS 2 (TA = 25C) RF: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm add - 3.6 V add - 6 V add - 4.5 V add - 9 V add - 7.5 V Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V Input Power Pin (dBm) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 0 0.0 40 0.8 35 0.7 30 0.6 25 0.5 20 0.4 15 0.3 10 0.2 5 0.1 25 10 5 0 –15 –10 –5 15 Input Power Pin (dBm) POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER Gp - 3.6 V Gp - 4.5 V Gp - 6 V Gp - 7.5 V Gp - 9 V 00 40 80 35 70 30 60 25 50 20 40 15 30 10 20 510 IDS - 3.6 V IDS - 6 V IDS - 4.5 V IDS - 9 V IDS - 7.5 V η η η η η 20 25 10 5 0 –15 –10 –5 15 20 Remark The graphs indicate nominal characteristics. |
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