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HYB3164400AT-60 Datasheet(PDF) 11 Page - Siemens Semiconductor Group |
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HYB3164400AT-60 Datasheet(HTML) 11 Page - Siemens Semiconductor Group |
11 / 26 page Semiconductor Group 11 HYB3164(5)400AJ/AT(L)-40/-50/-60 16M x 4-DRAM Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write cycle time tPRWC 60 – 71 – 80 – ns CAS precharge to WE tCPWD 40 – 48 – 55 – ns CAS-before-RAS Refresh Cycle CAS setup time tCSR 5– 5– 5–ns CAS hold time tCHR 5– 5– 10 –ns RAS to CAS precharge time tRPC 0– 0– 0–ns Write to RAS precharge time tWRP 5– 5– 10 –ns Write hold time referenced to RAS tWRH 5– 5– 10 –ns Self Refresh Cycle (L-version only) RAS pulse width tRASS 100k – 100k – 100k – ns 17 RAS precharge time tRPS 75 – 90 – 110 – ns 17 CAS hold time tCHS -50 – -50 – -50 – ns 17 Test Mode Cycle Write command setup time tWTS 5– 5– 5–ns 18 Write command hold time tWTH 5– 5– 5–ns 18 Capacitance T A = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz Parameter Symbol Limit Values Unit min. max. Input capacitance (A0 to A11,A12) C I1 –5pF Input capacitance (RAS, CAS, WE, OE) C I2 –7pF I/O capacitance (I/O1-I/O4) C IO –7pF AC Characteristics (cont’d)(note: 6,7,8) AC64-2F T A = 0 to 70 °C,VCC = 3.3 ± 0.3V Parameter Symbol -40 -50 -60 Unit Note min. max. min. max. min. max. |
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