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HYB3164405BT-40 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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HYB3164405BT-40 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 29 page Semiconductor Group 7 HYB3164(5)405BJ/BT(L)-40/-50/-60 16M x 4-DRAM Absolute Maximum Ratings Operating temperature range.............................................................................................. 0 to 70 °C Storage temperature range......................................................................................... – 55 to 150 °C Input/output voltage.................................................................................. -0.5 to min (Vcc+0.5,4.6) V Power supply voltage.................................................................................................... -0.5V to 4.6 V Power dissipation............................................................................................................... .....0.62 W Data out current (short circuit)................................................................................................ ..50 mA Note Stresses above those listed under „Absolute Maximum Ratings“may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability. DC Characteristics T A = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V Parameter Symbol Limit Values Unit Note min. max. Input high voltage V IH 2.0 Vcc+0.3 V 1) Input low voltage V IL – 0.3 0.8 V 1) Output high voltage (LVTTL) Output „H“level voltage (Iout = -2mA) V OH 2.4 – V Output low voltage (LVTTL) Output „L“level voltage (Iout = +2mA) V OL –0.4 V Output high voltage (LVCMOS) Output „H“level voltage (Iout = -100uA) V OH Vcc-0.2 - V Ouput low voltage (LVCMOS) Output „L“level voltage (Iout = +100uA) V OL - 0.2 V Input leakage current,any input (0 V < Vin < Vcc , all other pins = 0 V I I(L) – 2 2 µA Output leakage current (DO is disabled, 0 V < Vout < Vcc ) I O(L) – 2 2 µA |
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