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HYB39S16160CT-6 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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HYB39S16160CT-6 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 15 page Semiconductor Group 6 HYB39S16160CT-6/-7 16MBit Synchronous DRAM Address Input for Mode Set (Mode Register Operation) Sequential Burst Addressing Interleave Burst Addressing 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 2 3 4 5 6 7 0 1 3 4 5 6 7 0 1 2 4 5 6 7 0 1 2 3 5 6 7 0 1 2 3 4 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 1 0 3 2 5 4 7 6 2 3 0 1 6 7 4 5 3 2 1 0 7 6 5 4 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0 BS A3 A4 A2 A1 A0 A10 A9 A8 A7 A6 A5 Address Bus (Ax) BT Burst Length CAS Latency Mode Register (Mx) CAS Latency M6 M5 M4 Latency 0 0 0 Reserve 00 1 1 01 0 2 01 1 3 1 0 0 Reserve 1 0 1 Reserve 1 1 0 Reserve 1 1 1 Reserve Burst Length M2 M1 M0 Length Sequential Interleave 000 1 1 001 2 2 010 4 4 011 8 8 1 0 0 Reserve Reserve 1 0 1 Reserve Reserve 1 1 0 Reserve Reserve 1 1 1 Full Page*) Reserve Burst Type M3 Type 0 Sequential 1 Interleave Operation Mode M11 M10 M9 M8 M7 Mode 00 0 0 0 Normal XX 1 0 0 Multiple Burst with Single Write Operation Mode *) optional |
Similar Part No. - HYB39S16160CT-6 |
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Similar Description - HYB39S16160CT-6 |
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