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HYB3165405TL-50 Datasheet(PDF) 11 Page - Siemens Semiconductor Group |
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HYB3165405TL-50 Datasheet(HTML) 11 Page - Siemens Semiconductor Group |
11 / 32 page Semiconductor Group 99 HYB3164(5)405J/T(L)-50/-60 16M x 4-DRAM CAS precharge to RAS Delay tRHCP 27 – 35 – ns OE pulse width tOEP 7–10 – ns OE hold time from CAS high tOEHC 7–10 – ns WE pulse width to output disable at CAS high tWPZ 7–10 – ns Output buffer turn-off delay from WE tWPZ 0 10 0 10 ns Hyper Page Mode (EDO) Read- modify-Write Cycle Hyper page mode (EDO) read-write cycle time tPRWC 51 – 66 – ns CAS precharge to WE tCPWD 41 – 49 – ns CAS before RAS refresh cycle CAS setup time tCSR 5–5– ns CAS hold time tCHR 8–10 – ns RAS to CAS precharge time tRPC 5–5– ns Write to RAS precharge time tWRP 8–10 – ns Write hold time referenced to RAS tWRH 8–10 – ns CAS-before-RAS counter test cycle CAS precharge time (CAS-before-RAS counter test cycle) tCPT 35 – 40 – ns Self Refresh Cycle RAS pulse width during self refresh tRASS 100k _ 100k _ ns 17 RAS precharge time during self refresh tRPS 84 _ 104 _ ns 17 CAS hold time during self refresh tCHS -50 _ -50 _ ns 17 AC Characteristics (cont’d) 5)6) T A = 0 to 70 ˚C,VCC = 3.3 V ± 0.3V , tT = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 min. max. min. max. |
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