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HYB39S256400T-8B Datasheet(PDF) 9 Page - Siemens Semiconductor Group

Part # HYB39S256400T-8B
Description  256 MBit Synchronous DRAM
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB39S256400T-8B Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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HYB 39S256400/800/160T
256 MBit Synchronous DRAM
Semiconductor Group
9
1998-10-01
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Notes
1. V = Valid, X = Don’t Care, L = Low Level, H = High Level.
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock
before the commands are provided.
3. This is the state of the banks designated by BS0, BS1 signals.
4. Device state is Full Page Burst operation.
5. Power Down Mode can not entry in the burst cycle. When this command assert in the burst mode
cycle device is clock suspend mode.
Operation
Device
State
CKE
n-1
CKE
n
DQM
BS0
BS1
AP =
A10
Addr
CS
RAS
CAS
WE
Bank Active
Idle
3
H
XXVVV
L
L
H
H
Bank Precharge
Any
H
X
X
VLXL
L
H
L
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
Write
Active
3
H
X
X
VLVL
H
L
L
Write with Auto Precharge
Active
3
HX
X
VHV
L
H
L
L
Read
Active
3
H
X
X
V
L
V
LHLH
Read with Auto Precharge Active
3
H
X
X
V
H
V
LHLH
Mode Register Set
Idle
H
XXVVV
LLLL
No Operation
Any
H
XXXXX
L
H
H
H
Burst Stop
Active
4
H
XXXXX
L
H
H
L
Device Deselect
Any
H
XXXXX
H
XXX
Auto Refresh
Idle
H
H
XXXX
L
L
L
H
Self Refresh Entry
Idle
H
L
XXXX
L
L
L
H
Self Refresh Exit
Idle
(Self
Refr.)
L
H
XXXX
H
XXX
LH
H
X
Clock Suspend Entry
Active
H
L
XXXXXXXX
Power Down Entry
(Precharge or active
standby)
Idle
Active
5
H
L
XXXX
H
XXX
LH
H
X
Clock Suspend Exit
Active
L
H
XXXXXXXX
Power Down Exit
Any
(Power
Down)
L
H
XXXX
H
XXX
LH
HL
Data Write/Output Enable
Active
H
X
L
XXXXXXX
Data Write/Output Disable
Active
H
X
H
XXXXXXX


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