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AM20N10-250DE Datasheet(PDF) 1 Page - Analog Power

Part # AM20N10-250DE
Description  N-Channel 100-V (D-S) MOSFET
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Manufacturer  ANALOGPOWER [Analog Power]
Direct Link  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM20N10-250DE Datasheet(HTML) 1 Page - Analog Power

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AM20N10-250DE
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM20N10-250DE_A
1
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m( )
ID (A)
280 @VGS= 10V
11
355 @VGS= 4.5V
10
PRODUCT SUMMARY
100
N-Channel 100-V (D-S) MOSFET
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
Limit
Units
VDS
100
VGS
±20
Continuous Drain Current
a
TC=25
o
C ID
11
IDM
36
IS
30
A
Power Dissipation
a
TC=25
o
C PD
50
W
TJ, Tstg -55 to 175
o
C
Operating Junction and Storage Temperature Range
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUMRATINGS (TA = 25
oCUNLESSOTHERWISENOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
A
Parameter
Symbol
Maximum
Units
Maximum Junction-to-Ambient
a
RθJA
50
oC/W
Maximum Junction-to-Case
RθJC
3.0
oC/W
THERMAL RESISTANCE RATINGS
ESD Protected
2000V


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