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HYB3165805T-50 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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HYB3165805T-50 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
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4 / 32 page  Semiconductor Group 152 HYB3164(5)805J/T(L)-50/-60 8M x 8 EDO-DRAM TRUTH TABLE FUNCTION RAS CAS WRITE OE ROW ADDR COL ADDR I/O1- I/O4 Standby H H - X X X X X High Impedance Read L L H L ROW COL Data Out Early-Write L L L X ROW COL Data In Delayed-Write L L H - L H ROW COL Data In Read-Modify-Write L L H - L L - H ROW COL Data Out, Data In Hyper Page Mode Read 1st Cycle L H - L H L ROW COL Data Out 2nd Cycle L H - L H L n/a COL Data Out Hyper Page Mode Write 1st Cycle L H - L L X ROW COL Data In 2nd Cycle L H - L L X n/a COL Data In Hyper Page Mode RMW 1st Cycle L H - L H - L L - H ROW COL Data Out, Data In 2st Cycle L H - L H - L L - H n/a COL Data Out, Data In RAS only refresh L H X X ROW n/a High Impedance CAS-before-RAS refresh H - L L H X X n/a High Impedance Test Mode Entry H - L L L X X n/a High Impedance Hidden Refresh READ L-H-L L H L ROW COL Data Out WRITE L-H-L L L X ROW COL Data In Self Refresh (L-version only) H - L L H X X X High Impedance |
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