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HYB5116400BT-60 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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HYB5116400BT-60 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
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9 / 26 page  Semiconductor Group 9 HYB 5116400BJ/BT-50/-60/-70 4M x 4-DRAM Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write cycle time tPRWC 71 – 80 – 95 – ns CAS precharge to WE tCPWD 48 – 55 – 65 – ns CAS-before-RAS Refresh Cycle CAS setup time tCSR 10 – 10 – 10 – ns CAS hold time tCHR 10 – 10 – 10 – ns RAS to CAS precharge time tRPC 5–5 –5– ns Write to RAS precharge time tWRP 10 – 10 – 10 – ns Write hold time referenced to RAS tWRH 10 – 10 – 10 – ns CAS-before-RAS Counter Test Cycle CAS precharge time tCPT 35 – 40 – 40 – ns Test Mode CAS hold time tCHRT 30 – 30 – 30 – ns Write command setup time tWTS 10 – 10 – 10 – ns Write command hold time tWTH 10 – 10 – 10 – ns Self Refresh Cycle RAS pulse width tRASS 100k – 100k – 100k – ns 17 RAS precharge time tRPS 95 – 110 – 130 – ns 17 CAS hold time tCHS -50 – -50 – -50 – ns 17 AC Characteristics (cont’d) 5)6) 16F T A = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 5 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. |
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