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AM2308NE Datasheet(PDF) 1 Page - Analog Power

Part # AM2308NE
Description  N-Channel 30-V (D-S) MOSFET
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Manufacturer  ANALOGPOWER [Analog Power]
Direct Link  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM2308NE Datasheet(HTML) 1 Page - Analog Power

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AM2308NE
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM2308NE_B
1
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m( )
ID (A)
60 @ VGS = 4.5V
3.5
82 @ VGS = 2.5V
3.0
PRODUCT SUMMARY
30
N-Channel 30-V (D-S) MOSFET
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
Limit
Units
VDS
30
VGS
±12
TA=25
o
C
3.5
TA=70
o
C
2.8
IDM
16
IS
1.25
A
TA=25
o
C
1.25
TA=70
o
C
0.8
TJ, Tstg
-55 to 150
o
C
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oCUNLESSOTHERWISENOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous Drain Current
a
ID
A
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W
Symbol
Maximum
Units
t <= 10 sec
100
o
C/W
Steady-State
166
o
C/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
RθJA
D
S
G
ESD Protected
2000V


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