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AM2308NE Datasheet(PDF) 1 Page - Analog Power |
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AM2308NE Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page AM2308NE Analog Power PRELIMINARY Publication Order Number: DS-AM2308NE_B 1 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) rDS(on) m( ) ID (A) 60 @ VGS = 4.5V 3.5 82 @ VGS = 2.5V 3.0 PRODUCT SUMMARY 30 N-Channel 30-V (D-S) MOSFET • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 30 VGS ±12 TA=25 o C 3.5 TA=70 o C 2.8 IDM 16 IS 1.25 A TA=25 o C 1.25 TA=70 o C 0.8 TJ, Tstg -55 to 150 o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oCUNLESSOTHERWISENOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W Symbol Maximum Units t <= 10 sec 100 o C/W Steady-State 166 o C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA D S G ESD Protected 2000V |
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