AM4536C

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4536_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

5.8

7.1

-4.9

-6.0

30

PRODUCT SUMMARY

-30

P & N-Channel 30-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

7

8

5

6

Symbol N-Channe l P-Channe l Units

30

-30

±20

±20

o

C

7.1

-6.0

o

C

5.8

-4.9

20

-20

1.3

-1.3

A

o

C

2.1

2.1

o

C

1.3

1.3

o

C

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

-55 to 150

Continuous Source Current (Diode Conduction)

a

Paramete r

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Symbol

Maximum

Units

t <= 10 sec

62.5

Steady State

110

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a