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HYB3117800BSJ-60 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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HYB3117800BSJ-60 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 23 page Semiconductor Group 1 1998-10-01 • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: • Power dissipation: • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode • All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible • 2048 refresh cycles / 32 ms (2k-refresh) • Plastic Package: P-SOJ-28-3 400 mil -50 -60 t RAC RAS access time 50 60 ns t CAC CAS access time 13 15 ns t AA Access time from address 25 30 ns t RC Read/Write cycle time 84 104 ns t PC Fast page mode cycle time 35 40 ns HYB5117800 HYB3117800 -50 -60 -50 -60 Power Supply 5 ± 10% 3.3 ± 0.3 V Active 440 385 288 252 mW TTL Standby 11 7.2 mW CMOS Standby 5.5 3.6 mW 2M × 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode) Advanced Information HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 |
Similar Part No. - HYB3117800BSJ-60 |
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