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HYB5117405BJ-50 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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HYB5117405BJ-50 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
9 / 28 page Semiconductor Group 9 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4-EDO DRAM Output turn-off delay from OE tOEZ 013 0 15 017 ns 12 Data to CAS low delay tDZC 0–0 –0– ns 13 Data to OE low delay tDZO 0–0 –0– ns 13 CAS high to data delay tCDD 10 – 13 – 15 – ns 14 OE high to data delay tODD 10 – 13 – 15 – ns 14 Write Cycle Write command hold time tWCH 8–10 – 10 – ns Write command pulse width tWP 8–10 – 10 – ns Write command setup time tWCS 0–0 –0– ns 15 Write command to RAS lead time tRWL 13 – 15 – 17 – ns Write command to CAS lead time tCWL 13 – 15 – 17 – ns Data setup time tDS 0–0 –0– ns 16 Data hold time tDH 8–10 – 12 – ns 16 Read-modify-Write Cycle Read-write cycle time tRWC 113 – 138 – 162 – ns RAS to WE delay time tRWD 64 – 77 – 89 – ns 15 CAS to WE delay time tCWD 27 – 32 – 36 – ns 15 Column address to WE delay time tAWD 39 – 47 – 54 – ns 15 OE command hold time tOEH 10 – 13 – 15 – ns Hyper Page Mode (EDO) Cycle Hyper page mode (EDO) cycle time tHPC 20 – 25 – 30 – ns CAS precharge time tCP 8–10 – 10 – ns Access time from CAS precharge tCPA –27 – 32 –37 ns 7 Output data hold time tCOH 5–5 –5– ns RAS pulse width in EDO mode tRAS 50 200k 60 200k 70 200k ns CAS precharge to RAS Delay tRHPC 27 – 32 – 37 – ns AC Characteristics (cont’d) 5)6) 16E TA = 0 to 70 °C,VCC = 5 V ± 10 %, t T = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. |
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