HYB 5(3)117805/BSJ-50/-60

2M

× 8 EDO-DRAM

Semiconductor Group

4

1998-10-01

Absolute Maximum Ratings

Operating temperature range ........................................................................................... 0 to 70

°C

Storage temperature range....................................................................................... – 55 to 150

°C

Input/output voltage (5 V versions) .................................................... – 0.5 to min (

V

Input/output voltage (3.3 V versions) ................................................. – 0.5 to min (

V

Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V

Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V

Power dissipation (5 V versions) ............................................................................................. 1.0 W

Power dissipation (3.3 V versions) .......................................................................................... 0.5 W

Data out current (short circuit) ................................................................................................ 50 mA

damage of the device. Exposure to absolute maximum rating conditions for extended periods

DC Characteristics

T

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

5 V Versions

Power supply voltage

V

CC

4.5

5.5

V

Input high voltage

V

IH

2.4

V

V

1

Input low voltage

V

IL

– 0.5

0.8

V

1

Output high voltage (

I

V

OH

2.4

–

V

1

Output low voltage (

I

V

OL

–

0.4

V

1

3.3 V Versions

Power supply voltage

V

CC

3.0

3.6

V

Input high voltage

V

IH

2.0

V

V

1

Input low voltage

V

IL

– 0.5

0.8

V

1

TTL Output high voltage (

I

V

OH

2.4

–

V

1

TTL Output low voltage (

I

V

OL

–

0.4

V

1

CMOS Output high voltage (

I

V

OH

V

–

V

CMOS Output low voltage (

I

V

OL

–

0.2

V

Common Parameters

Input leakage current

(0 V

I

I(L)

– 10

10

µA

1

Output leakage current

(DO is disabled, 0 V

I

O(L)

– 10

10

µA

1