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HYB5118160BSJ-50 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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HYB5118160BSJ-50 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 24 page Semiconductor Group 1 1998-10-01 • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: • Power Dissipation, Refresh & Addressing: • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh • All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible • Plastic Package: P-SOJ-42-1 400 mil -50 -60 t RAC RAS access time 50 60 ns t CAC CAS access time 13 15 ns t AA Access time from address 25 30 ns t RC Read/Write cycle time 84 104 ns t PC Fast page mode cycle time 35 40 ns HYB5118160 HYB3118160 -50 -60 -50 -60 Power Supply 5 V ± 10 % 3.3 V ± 0.3 V Addressing 10/10 10/10 Refresh 1024 cycles / 16 ms Active 715 632 468 414 mW TTL Standby 11 7.2 mW CMOS Standby 5.5 3.6 mW 1M × 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode) Advanced Information HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 |
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