HYB 5(3)117805/BSJ-50/-60

2M

× 8 EDO-DRAM

Semiconductor Group

2

1998-10-01

The HYB 5(3)117805 are 16 MBit dynamic RAMs based on the die revisions “G” & “F” and

organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon

gate process technology, as well as advanced circuit techniques to provide wide operating margins,

both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117805BJ

to be packaged in a standard SOJ-28 plastic packages. Package with 400 mil width are available.

These packages provide high system bit densities and are compatible with commonly used

automatic testing and insertion equipment.

Ordering Information

Type

Ordering Code

Package

Descriptions

HYB 5117805BSJ-50

Q67100-Q1104

P-SOJ-28-3 400 mil

5 V

50 ns EDO-DRAM

HYB 5117805BSJ-60

Q67100-Q1105

P-SOJ-28-3 400 mil

5 V

60 ns EDO-DRAM

HYB 3117805BSJ-50

on request

P-SOJ-28-3 400 mil

3.3 V 50 ns EDO-DRAM

HYB 3117805BSJ-60

on request

P-SOJ-28-3 400 mil

3.3 V 60 ns EDO-DRAM

Pin Names and Configuration

A0 - A10

Row Address Inputs

A0 - A9

Column Address Inputs

RAS

Row Address Strobe

OE

Output Enable

I/O1 - I/O8

Data Input/Output

CAS

Column Address Strobe

WE

Read/Write Input

V

CC

Power Supply

+ 5 V for HYB 5117800

+ 3.3 V for HYB 3117805

V

SS

Ground (0 V)

N.C.

Not Connected

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

A5

OE

I/O5

CAS

A0

A1

A2

I/O3

I/O4

WE

RAS

N.C.

A10

SS

V

CC

V

A9

I/O8

I/O7

SS

V

I/O1

I/O2

A3

A6

A7

28

27

26

A8

I/O6

SPP02803

A4

P-SOJ-28 400 mil