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Q67100-Q1086 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q67100-Q1086 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 26 page Semiconductor Group 1 1998-10-01 • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: • Power Dissipation, Refresh & Addressing: • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode • All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible • Plastic Package: P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil -50 -60 t RAC RAS access time 50 60 ns t CAC CAS access time 13 15 ns t AA Access time from address 25 30 ns t RC Read/Write cycle time 84 104 ns t PC Fast page mode cycle time 35 40 ns HYB 5116400 HYB 3116400 HYB 5117400 HYB 3117400 -50 -60 -50 -60 -50 -60 -50 -60 Power Supply 5 V ± 10% 3.3 V ± 0.3 V 5 V ± 10% 3.3 V ± 0.3 V Addressing 12/10 12/10 11/11 11/11 Refresh 4096 cycles / 64 ms 2048 cycles / 32 ms Active 275 220 180 144 440 385 288 252 mW TTL Standby 11 7.2 11 7.2 mW CMOS Standby 5.5 3.6 5.5 3.6 mW 4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) Advanced Information HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 |
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