HYB 5(3)14265BJ(L)-400/-40/-45/-50

256K x 16 EDO-DRAM

Semiconductor Group

5

Absolute Maximum Ratings

Operating temperature range ........................................................................................ 0 to + 70

°C

Storage temperature range..................................................................................... – 55 to + 150

°C

Input/output voltage for HYB 514265................................................ – 0.5 to min. (

V

Power supply voltage for HYB 514265 ........................................................................... – 1 to + 7 V

Input/output voltage for HYB 314265................................................ – 0.5 to min. (

V

Power supply voltage for HYB 314265 ..................................................................... – 0.5 to + 4.6 V

Data out current (short circuit) ................................................................................................ 50 mA

Note:

damage of the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics for HYB514265

T

Parameter

Symbol

Limit Values

Unit Notes

min.

max.

Input high voltage

V

IH

2.4

V

V

1

Input low voltage

V

IL

– 0.5

0.8

V

1

Output high voltage (

I

V

OH

2.4

–

V

1

Output low voltage (

I

V

OL

–

0.4

V

1

Input leakage current, any input

(0 V <

V

I

I(L)

– 10

10

µA

1

Output leakage current

(DO is disabled, 0 V <

V

I

O(L)

– 10

10

µA

1

Average

V

-400 version

-40 version

-45 version

-50 version

I

CC1

–

120

120

105

95

mA

2, 3, 4

Standby

V

I

CC2

–

2

mA

–

Average

V

refresh cycles:

-400 version

-40 version

-45 version

-50 version

I

CC3

–

120

120

105

95

mA

2, 4