Semiconductor Group

56

HYB 514256B/BL/BJ/BJL-50/-60/-70

256 K

× 4-DRAM

The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by

4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as

advanced circuit techniques to provide wide operating margins, both internally and for the system

user. Multiplexed address inputs permit the HYB 514256B/BJ/BL/BJL to be packaged in a standard

plastic P-DIP-20-2,or plastic P-SOJ-26/20-1. This package size provides high system bit densities

and is compatible with commonly used automatic testing and insertion equipment. System oriented

features include single + 5 V (

± 10 %) power supply, direct interfacing with high-performance logic

device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery

backup applications.

Pin Definitions and Functions

Pin No.

Function

A0-A8

Address Inputs

RAS

Row Address Strobe

OE

Output Enable

I/O1-I/O4

Data Input/Output

CAS

Column Address Strobe

WE

Read/Write Input

V

CC

Power Supply (+ 5 V)

V

SS

Ground (0 V)

N.C.

No Connection