Semiconductor Group

542

The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by

32-bit in a 72-pin single-in-line package comprising eight HYB 514400BJ 1M

× 4 DRAMs in 300 mil

wide SOJ-packages mounted together with eight 0.2

µF ceramic decoupling capacitors on a PC

board.

The HYM 321160S/GS-60/-70 can also be used as a 2 097 152 words by 16-bits dynamic RAM

module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and

DQ31, respectively.

Each HYB 514400BJ is described in the data sheet and is fully electrically tested and processed

according to Siemens standard quality procedure prior to module assembly. After assembly onto

the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins.

The common I/O feature on the HYM 321160S/GS-60/-70 dictates the use of early write cycles.

Pin Definitions and Functions

Presence Detect Pins

Pin No.

Function

A0-A9

Address Inputs

DQ0-DQ31

Data Input/Output

CAS0 - CAS3

Column Address Strobe

RAS0, RAS2

Row Address Strobe

WE

Read/Write Input

V

CC

Power (+ 5 V)

V

SS

Ground

PD

Presence Detect Pin

N.C.

No Connection

-60

-70

PD0

V

SS

V

SS

PD1

V

SS

V

SS

PD2

N.C.

V

SS

PD3

N.C.

N.C.

HYM 321160S/GS-60/-70

1M x 32-Bit