DS28EC20: 20Kb 1-Wire EEPROM

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Note 1:

System requirement.

Note 2:

Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system, 1-Wire recovery times, and

current requirements during EEPROM programming. The specified value here applies to systems with only one device and with

the minimum 1-Wire recovery times. For more heavily loaded systems, an active pullup such as that found in the DS2482-x00,

DS2480B, or DS2490 may be required.

Note 3:

does not affect normal communication.

Note 4:

Guaranteed by design, characterization and/or simulation only. Not production tested.

Note 5:

Note 6:

Voltage below which, during a falling edge on I/O, a logic 0 is detected.

Note 7:

Note 8:

Voltage above which, during a rising edge on I/O, a logic 1 is detected.

Note 9:

Note 10:

The I-V characteristic is approximately linear for voltages less than 1V.

Note 11:

Applies to a single device attached to a 1-Wire line.

Note 12:

Note 13:

Note 14:

detect pulse could be outside this interval but will be complete within 2ms after power-up.

Note 15:

ε

Note 16:

δ

Note 17:

Current drawn from I/O during the EEPROM programming interval. The pullup circuit on I/O during the programming interval

Note 18:

sequence. Interval ends once the device's self-timed EEPROM programming cycle is complete and the current drawn by the

Note 19:

Note 20:

Not 100% production-tested; guaranteed by reliability monitor sampling.

Note 21:

Note 22:

Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to data sheet

limit at operating temperature range is established by reliability testing.

Note 23:

EEPROM writes may become nonfunctional after the data retention time is exceeded. Long-time storage at elevated

temperatures is not recommended; the device may lose its write capability after 10 years at +125°C or 40 years at +85°C.