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Q67100-Q2096 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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Q67100-Q2096 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 10 page Semiconductor Group 2 HYM 324025S/GS-50/-60 4M x 32-Bit EDO-Module The HYM 324025S/GS-50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 324025S/GS-50/-60 dictates the use of early write cycles. Ordering Information Type Ordering Code Package Description HYM 324025S-50 Q67100-Q2156 L-SIM-72-12 EDO - DRAM Module (access time 50 ns) HYM 324025S-60 Q67100-Q2157 L-SIM-72-12 EDO - DRAM Module (access time 60 ns) HYM 324025GS-50 Q67100-Q2096 L-SIM-72-12 EDO - DRAM Module (access time 50 ns) HYM 324025GS-60 L-SIM-72-12 EDO - DRAM Module (access time 60 ns) |
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Similar Description - Q67100-Q2096 |
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