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Q67100-Q3018 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q67100-Q3018 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 10 page Semiconductor Group 1 8M × 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Information • 8 388 608 words by 36-Bit organization in 2 banks • Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time • Hyper page mode (EDO) capability 25 ns cycle time • Single + 5 V ( ± 10 %) supply • Low power dissipation max. 7260 mW active CMOS – 132 mW standby TTL – 264 mW standby • CAS-before-RAS refresh RAS-only-refresh Hidden-refresh • 24 decoupling capacitors mounted on substrate • All inputs, outputs and clocks fully TTL compatible • 72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height • Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages • 2048 refresh cycles / 32 ms • Optimized for use in byte-write parity applications • Tin-Lead contact pads (HYM 368035S-60) • Gold contact pads (HYM 368035GS-60) 4.96 |
Similar Part No. - Q67100-Q3018 |
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Similar Description - Q67100-Q3018 |
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