Semiconductor Group

1

8M

× 36-Bit EDO-DRAM Module

HYM 368035S/GS-60

Advanced Information

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8 388 608 words by 36-Bit organization in 2 banks

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Fast access and cycle time

60 ns RAS access time

15 ns CAS access time

104 ns cycle time

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Hyper page mode (EDO) capability

25 ns cycle time

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Single + 5 V (

± 10 %) supply

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Low power dissipation

max. 7260 mW active

CMOS – 132 mW standby

TTL

– 264 mW standby

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CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

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24 decoupling capacitors mounted on substrate

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All inputs, outputs and clocks fully TTL compatible

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72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height

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Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages

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2048 refresh cycles / 32 ms

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Optimized for use in byte-write parity applications

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Tin-Lead contact pads (HYM 368035S-60)

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Gold contact pads (HYM 368035GS-60)

4.96