HYM64V4005GU-50 datasheet(9/17 Pages) SIEMENS

Part #	HYM64V4005GU-50

Description	3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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9 / 17 page

HYM64(72)V4005/45GU-50/-60

4M x 64/72 DRAM Module

Semiconductor Group

9

DC Characteristics for HYM64/72V4005

T

A = 0 to 70 °C; VCC = 3.3 V ± 0.3 V

Parameter

Symbol

x 64

x 72

Unit Note

s

min.

max.

min.

max.

Average

V

CC supply current:

-50 version

-60 version

(RAS,CAS,address cycling,

t

RC=tRC min.)

I

CC1

–

1920

1760

–

2160

1980

mA

2) 3)

4)

Standby

V

CC supply current

(RAS = CAS =

V

IH, one address change)

I

CC2

–

32

–

36

mA

–

Average

V

CC supply current during RAS

only refresh cycles:

-50 version

-60 version

(RAS cycling, CAS =

V

IH ,

t

RC = tRC min.)

I

CC3

–

1920

1760

–

2160

1980

mA

2) 4)

Average

V

CC supply current during

hyper page mode (EDO):

-50 version

-60 version

(RAS =

V

IL, CAS, address cycling

t

PC = tPC min.)

I

CC4

–

1120

880

–

1260

990

mA

2) 3)

4)

Standby

V

CC supply current

(RAS = CAS =

V

CC – 0.2 V, one address

change)

I

CC5

–

16

–

18

mA

–

Average

V

CC supply current during

CAS-before-RAS refresh mode:

-50 version

-60 version

(RAS, CAS cycling

, t

RC = tRC min.)

I

CC6

–

1920

1760

–

2160

1980

mA

2) 4)

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HYM64V4005GU-50 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

HYM64V4005GU-50 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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