Absolute Maximum Ratings (Ta=25ºC)

ITEMS

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

Vceo

30

V

Emitter-Collector Voltage

Veco

5

V

Collector Current

Ic

50

mA

Collector Power Dissipation

Pc

150

mW

Operating Temperature Range

Topr

-30 ~ +100

ºC

Storage Temperature Range

Tstg

-40 ~ +125

ºC

Junction Temperature

Tj

125

ºC

Lead Soldering Temperature*1

Tls

260

ºC

*1: Time 5 Sec max, Position: Up to 3mm from the body.

Peak Sensitivity Wavelength: 880nm

The MTD8000N4-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high

reliability and high sensitivity applications.

FEATURES

APPLICATIONS

Electrical & Optical Characteristics (Ta = 25ºC)

ITEMS

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Light Current

IL

Vce=20V, L=100Lux *1

--

3.0

--

mA

Dark Current

ID

Vce=20V

--

--

100

nA

C-E Saturation Voltage

VCE(sat)

Ic=0.2mA, L=1000Lux *1

--

0.2

--

V

Spectral Sensitivity

λ

--

--

400~1100

--

nm

Spectral Sensitivity

λ

*2

--

800~1100

--

nm

Peak Sensitivity Wavelength

λp

--

--

880

--

nm

Switching Time (Rise Time)

Tr

RL=100Ω,

Vcc=5V, Ic=1mA

--

10.0

--

µS

Switching Time (Fall Time)

Tf

RL=100Ω,

Vcc=5V, Ic=1mA

--

10.0

--

µS

Anglar Response

Ө

--

--

±12

--

deg

Photo Transistor

Product No:

MTD8000N4-T

Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA

www.marktechopto.com

TOLL FREE:

1

2011-07-19