Absolute Maximum Ratings (Ta=25ºC)

ITEMS

SYMBOL

RATINGS

UNIT

Forward Current (DC)

IF

100

mA

Forward Current (Pulse)*1

IFP

1

A

Reverse Voltage

VR

5

V

Power Dissipation

PD

200

mW

Operating Temperature Range

Topr

-20 ~ +85

ºC

Storage Temperature Range

Tstg

-30 ~ +100

ºC

Junction Temperature

Tj

260

ºC

*1: Tw=10µsec, T=10msec.

Peak Emission Wavelength: 850nm

The 850nm high power infrared LED Series is designed for application requiring high accuracy and

precision as well as uniform spectral emission. Custom package solutions and sorting are available.

FEATURES

APPLICATIONS

> Edge Sensing / Optical Sensors

> Optical Switches / Security Systems

Electrical & Optical Characteristics (Ta = 25ºC)

ITEMS

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Power Output

PO

IF=50mA

--

6.0

--

mW

Forward Voltage

VF

IF=50mA

--

1.5

2.0

V

Reverse Current

IR

VR=5V

--

--

10

µA

Peak Emission Wavelength

λp

IF=50mA

--

850

--

nm

Spectral Line Half Width

∆

λ

IF=50mA

--

45

--

nm

Half Intensity Beam Angle

Ө

IF=50mA

--

±3

--

deg

High Power Infrared LED

Product No:

MTE8560P

Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA

www.marktechopto.com

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2011-09-28