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HYS72V2100GCU-10 Datasheet(PDF) 11 Page - Siemens Semiconductor Group |
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HYS72V2100GCU-10 Datasheet(HTML) 11 Page - Siemens Semiconductor Group |
11 / 12 page HYS64(72)V2100G(C)U-10 2M x 64/72 SDRAM-Module Semiconductor Group 11 SPD-Table (cont’d) Byte# Description SPD Entry Value Hex x64 x72 28 Minimum Row Active to Row Active delay tRRD 20 ns 14 14 29 Minimum RAS to CAS delay tRCD 30 ns 1E 1E 30 Minimum RAS pulse width tRAS 45 ns 2D 2D 31 Module Bank Density (per bank) 16 MByte 04 04 32-61 Superset information (may be used in future) FF FF 62 SPD Revision Revision 1 01 01 63 Checksum for bytes 0 - 62 F3 05 64- 127 Manufactures’s information (optional) (FFh if not used) FF FF 128+ Unused storage locations FF FF L-DIM-168-27 SDRAM DIMM Module package 133,35 1 84 10 11 40 41 85 127,35 168 124 125 66,68 42,18 6,35 2,0 Detail B 6,35 2,0 Detail A Detail C 1,27 1,0 + 0.5 - AC AB 3,0 + - 0,2 0,15 DM168-27.WMF(EWK) 94 95 |
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